Dual MOSFET combi saves space without performance compromise

Enabling designers to replace equivalent devices in SOT223 and DPak (TO252) packages, the N- and P-channel MOSFET combination reduces board space and component count and simplifies gate drive circuit layouts. As an illustration of its space saving potential, the SO8 package’s footprint of just 31mm2 is for example 30% that of two SOT223 MOSFETs.

The N- and P-channel MOSFETs used in the dual device package exhibit low gate charge and typical RDS(ON) of respectively 230mΩ and 235mΩ at VGS of 10V, ensuring switching and on state losses are minimised. 2.4W and 2.6W are respective power dissipation figures.

The ZXMC10A816 complementary dual MOSFET package is priced at US $0.28 in 10K piece quantities.