Dual IGBT Gate Driver is suited for driving SiC MOSFETs
A Dual IGBT Gate Driver, featuring two high current outputs, has been announced by IXYS. The IX2204 driver's high current outputs are capable of sourcing 2A and sinking 4A. Manufactured on IXYS ICD's advanced BCDMOS Silicon on Insulator (SOI) process, the IX2204 outputs have a wide operation voltage range of -10V to +26V.
The negative gate drive capability can be used to insure the turn-off of high power IGBTs. The outputs can be paralleled for IGBT gates that require higher drive current. The IX2204 is extremely robust and virtually immune to the voltage transients that are common in high power applications.
The IX2204 is readily able to provide the +18 to +20V turn-on and the -2V to -5V turn-off drive voltages required by many SiC power MOSFETs.
A desaturation detection circuit protects the power IGBT during an over-current or short circuit condition. If desaturation is detected, the IX2204 turns off the power IGBT in a controlled two-level manner that prevents excessive di/dt induced voltage transients. Under voltage lockout (UVLO) circuitry protects the IGBT from insufficient gate voltage. A Fault output signals a desaturation or UVLO event.
The IX2204 has TTL compatible inputs and is rated for an extended operating temperature range of -40 degrees C to +125 degrees C. Applications include IGBT switching, motor controls and switch mode power supplies. The IX2204 is available in a 16-lead thermally enhanced SOIC package. The IX2204 is available in production quantities.
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