Diodes Incorporated releases first product in thermally enhanced powerdi5060 package

With a junction to case thermal resistance (Rthj-c) of 2.10C/W the powerDI5060's thermal resistance is 10 times lower than an SO8 alternative, improving on power dissipation performance, resulting in cooler running and more reliable product design. Its off-board height of 1.1mm is also 54% less than that of SO8, making it well suited for low profile applications.

With a large drain pad significantly reducing package inductance and resistance parameters, the powerdi5060 package helps to significantly boost p-channel MOSFET performance. With the DMP3010LPS's low typical on-resistance of 7.8m? at 10V VGS on-state losses are effectively minimized in load switching and battery charging duties.

The DMP3010LPS 30V rated p-channel enhancement mode MOSFET from Diodes Incorporated is priced at $0.3 in 10k piece quantities.