IR’s Automotive DirectFET2 Power MOSFETs Deliver Exceptional Power Density and Performance

These first automotive DirectFET2 devices from IR are entirely lead-free and offer overall system level size and cost reductions along with superior performance and efficiency when compared to traditional standard plastic packaged components.

“The AUIRF7739L2 and the AUIRF7665S2 combine the outstanding reliability and performance of the proven DirectFET packaging technology with IR’s latest trench silicon process. The new DirectFET2 devices may be optimized by application for next-generation vehicle platforms for ultra-low on-state resistance (RDS(on)), gate charge (Qg) or logic level operation to deliver dramatically improved performance and efficiency, and reduced system size and part count,” said Benjamin Jackson, product manager, Automotive Products Business Unit.

The AUIRF7739L2 in the new large can package delivers the industry’s lowest RDS(on) of 0.7mOhm (typical) at 40V in a given PCB area. Moreover, the large can features a 60 percent smaller footprint and 85 percent lower profile than a D2PAK. The device offers exceptional power density and efficiency making it well suited to heavy load motor control applications including Electric Power Steering (EPS), battery switches and Integrated Starter Alternators (ISA) in Micro Hybrid Vehicles, and chassis, drive train and power train systems.

The AUIRF7665S2 small can device is optimized for very low gate charge and exhibits extremely low parasitics for fast and efficient switching performance. The DirectFET2 MOSFET is ideal for automotive switching applications including the output stage of Class D Audio amplifiers as well as DC-DC converters and fuel injection systems.

Both devices are qualified according to AEC-Q101 standards, feature an environmentally friendly, lead-free and RoHS compliant bill of materials, and are part of IR’s automotive quality initiative targeting zero defects.