Achieve twice the power density & half the power loss

These benefits are especially important in isolated high-voltage industrial, telecomms, enterprise computing and renewable energy applications.

With its integrated driver and features such as zero reverse-recovery current, the LMG3410 provides reliable performance, especially in hard-switching applications where it can dramatically reduce switching losses by as much as 80%. Unlike stand-alone GaN FETs, the easy-to-use LMG3410 integrates built-in intelligence for temperature, current and undervoltage lockout fault protection.

The 600V power stage delivers 50% lower power losses compared with state-of-the-art silicon-based boost PFCs. GaN's zero reverse-recovery charge benefits new switching topologies, including totem-pole PFC and LLC topologies to increase power density and efficiency. The reduced BOM count and higher efficiency enable a reduction in power-supply size of as much as 50%.

The LMG3410 is the first semiconductor IC to include GaN FETs manufactured by TI. Building on years of expertise in manufacturing and process technologies, TI creates its GaN devices in a silicon-compatible factory and qualifies them with practices that are beyond the typical JEDEC standards to ensure the reliability and robustness of GaN for demanding use cases. Easy-to-use packaging will help increase the adoption of GaN power designs in applications such as PFC AC/DC converters, high-voltage DC bus converters and PV inverters.

Steve Lambouses, Vice President, High-Voltage Power Solutions, Texas Instruments, commented: "With over 3 million hours of reliability testing, the LMG3410 gives power designers the confidence to realise the potential of GaN and to rethink their power architecture and systems in ways not feasible before. Expanding on TI's reputation for manufacturing capability and extensive system-design expertise, the new power stage is a significant step for the GaN market."

To support designers who are taking advantage of GaN technology in their power designs, TI is also introducing new products to expand its GaN ecosystem. The LMG5200POLEVM-10, a 48 to 1V PoL evaluation module, will include the TPS53632G GaN FET controller, paired with the 80V LMG5200 GaN FET power stage. The solution allows for efficiency as high as 92% in industrial, telecomms and datacomms applications.

The LMG3410's 8x8mm QFN package decreases power loss, component voltage stress and EMI compared to discrete GaN solutions.

TI will offer a development kit that includes a half-bridge daughtercard and four LMG3410 IC samples. A second kit contains a system-level evaluation motherboard. When used together, these two kits enable immediate bench testing and design. The two kits are available for purchase now in the TI store for $299.00 and $199.00, respectively.