ACEINNA to reveal latest automotive & industrial power solutions at APEC
ACEINNA has announced that they will be at APEC between 19th and 23rd March 2023 in Orlando, Florida showing their newest high-power current sensing solutions in Booth 863.
“ACEINNA current sensors maximise the benefits of using SiC/GaN and help further increase the overall power conversion efficiency while improving safety thanks to their industry-leading high accuracy, high bandwidth, and fast response time. They are used in a broad number of applications ranging from solar panel inverters, wind turbines, data centre power supplies, motor drivers in industrial and on-board chargers and fast DC chargers, traction inverters and various power supply and conversion applications in automotive,” said Teoman Ustun, Vice President Automotive Business Unit, ACEINNA. “ACEINNA’s family of MCx2101 (AEC-Q100 qualified Automotive) and MCx1101 (industrial) isolated AMR current sensors provide state-of-the-art performance in a cost-effective, easy-to-use, plug-and-play component.”
Silicon Carbide (SiC) and Galium Nitride (GaN) are starting to replace Silicon MOSFETs. These new transistors are enabling higher frequency systems with better efficiency and smaller size making them highly versatile.
When developing power solutions using these higher frequencies, engineers require a higher bandwidth current sensor for the current control loop.
Totem pole PFC requires fast switching ripple current measurement. Motor and inverter apps also require fast ripple current measurement. Higher bandwidth sensors enable fast step response in protection circuits.
ACEINNA Current Sensors are simple to integrate and easy to design in. This small single-chip isolated current sensing solution requires only a decoupling capacitor, and 1.5MHz frequency response enables SiC/GaN advantages such as higher frequency, smaller system size, and better system efficiency. Benchmark Step Response Time (300ns) minimises the protection timing budget for the current sensor and enables the protection of higher frequency SiC/GaN switches. Benchmark Accuracy (0.6% typical) over temperature for ICs provides better control and regulation to improve efficiency and reliability. Low offset and low noise provide high accuracy across the dynamic range.