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A hybrid approach to inverter efficiency and performance improvement

21st July 2014

Toshiba

Nat Bowers

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Whitepaper

Silicon carbide (SiC) devices have the potential to unlock significant performance and efficiency improvements in applications ranging from rail traction to renewable energy generation. This paper describes how the introduction of hybrid technologies that combine these performance and efficiency advantages with the high-power handling capabilities of silicon injection-enhanced gate transistors (IEGTs) is providing engineers with an effective way of significantly reducing losses while minimising equipment size.

By Dr Georges Tchouangue, Chief Engineer, Power Semiconductors, Toshiba Electronics Europe

Improving the efficiency of large motor drives used for applications such as rail traction or heavy industries like steel rolling, even by only a small percentage, can save a significant quantity of energy normally wasted as heat. This can translate into positive benefits for business operating costs, equipment design and performance, and carbon footprint. High-power semiconductors have made tremendous advances in recent years, as new device architectures, fabrication processes and technologies have helped to improve both switching and conduction efficiency.

In order to meet wider system requirements such as reliability and overall cost, designers of high-power drives such as choppers and inverters are typically faced with a choice of a thyristor or Insulated Gate Bipolar Transistor (IGBT) as the main switching element. Both device types have strengths and weaknesses, which force designers to make a selection that will deliver the best compromise in relation to a given application.

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