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A Guideline on the Usage of an Isolated Gate Driver to Efficiently Drive SiC MOSFETs

This application note provides guidance on how to design the power supply topology of NCP5156x family isolated gate drivers when using Silicon Carbide (SiC) MOSFETs.

As new power transistors, such as SiC MOSFETs, are being increasingly used in power electronics systems, it has become necessary to use special drivers. Isolated gate drivers are designed for the highest switching speeds and system size constrains required by technologies such as SiC (Silicon carbide) and GaN (Gallium nitride), by providing reliable control over IGBT and MOSFET.

This application note focuses on optimization the design of gate driving voltage for speed to minimize switching losses and to get the full benefit of the devices.

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