900v SiC MOSFETs cut cooling requirements
Availability and full design support capabilities for the expanded portfolio of 900V MOSFETs from Wolfspeed have been announced by Richardson RFPD. The C3M0120090J, C3M0120090D, C3M0280090J and C3M0280090D join the previously-released C3M0065090J and C3M0065090D and feature Wolfspeed’s new C3M SiC MOSFET technology.
They offer high blocking voltage with low On-resistance, high-speed switching with low capacitances, and fast intrinsic diode with low reverse recovery (Qrr).
The new SiC devices offer higher system efficiency, reduced cooling requirements, increased power density and increased system switching frequency to a range of applications, including renewable energy, EV battery chargers, high-voltage DC/DC converters, switch mode power supplies, lighting, telecom power supplies, and induction heating.
The SiC MOSFETs are commercially available with TO-247 and SMD package options. The newly-released surface-mount package, specifically designed for high-voltage MOSFETs, has a small footprint with a wide creepage distance of seven millimeters between its drain and source.
The new package also includes a separate driver-source connection that reduces gate ringing and provides clean gate signals.
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