900V MOSFETs enhance efficiency of flyback converters

21st March 2017

Alice Matthews

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Datasheet

Using the latest 900V MDmesh K5 super-junction MOSFETs from STMicroelectronics, power-supply designers can satisfy system demands for higher power and greater efficiency. According to the company, these MOSFETs deliver best-in-class on-resistance (R_DS(ON)) and dynamic characteristics. A 900V breakdown voltage assures extra safety margin in systems with high bus voltages. The new series contains the first 900V MOSFETs with R_DS(ON) below 100mΩ, and gives what is claimed to be the industry’s best R_DS(ON) among DPAK devices.

Also, with what the company claims to be the industry’s lowest gate charge (Qg), they ensure faster switching for greater flexibility where a wide input-voltage range is required. These characteristics ensure high efficiency and reliability in all types of flyback converters including standard, quasi-resonant, and active-clamp designs covering power ratings as low as 35W up to 230W or higher. In addition, low input and output capacitances (Ciss, Coss) enable zero-voltage switching with minimal energy loss in half-bridge LLC resonant converters.

The increased safety margin and static and dynamic behaviour of the new devices enable designers to improve the performance of a wide variety of products such as server power supplies, 3-phase Switched-Mode Power Supplies (SMPS), LED lighting supplies, Electric Vehicle (EV) chargers, solar generators, welders, industrial drives, and factory automation.

ST’s family of MDmesh K5 super-junction transistors now offers numerous choices at voltage ratings of 800, 850, 900, 950, 1,050, 1,200, and 1,500V. Together with versatile package options including TO-220AB, TO-220FP, TO-247, TO-247 Long Lead, IPAK and I2PAK, as well as D2PAK and DPAK surface-mount power packages, ST’s super-junction devices present designers with a comprehensive portfolio of Very High Voltage (VHV) MOSFETs.