650V GaN transistors boast switching frequency of 10MHz

Available in top-cooled and bottom-cooled packages, the GS-065-060 650 V transistors feature an Island Technology cell layout for high current die and high yield.

These 650 V automotive E-Mode Gan transistors deliver low junction-to-case thermal resistance and high-efficiency power switching, offering a reliable solution for on-board chargers, DC-DC converters, solar inverters, and industrial motor drives.

The devices are 650V enhancement mode power transistors with simple gate drive requirements ranging from 0 V to 6 V.

They boast a high switching frequency of more than 10 MHz, while delivering fast and controllable fall and rise times, and feature GaNPX packaging for low inductance and low thermal resistance.

The automotive transistors also offer reverse conduction capabilities and zero reverse recovery loss, delivering efficient performance for demanding, high-power applications. The transistors feature dual gate pads for optimal board layout and are RoHS 3-compliant.