60V power MOSFETs for motor control and power supplies

14th February 2017

Toshiba

Lanna Deamer

0 0

Datasheet

Toshiba's range of high-efficiency U-MOS IX-H MOSFETs has been extended, with an N-channel device in a ‘DSOP Advance’ SMD package that offers double sided cooling.

The 60V TPW1R306PL has an ultra-low typical on resistance (@ V_GS = 10V) of just 0.95mΩ and is offered in a very small form factor of 5x6mm. Maximum drain current and power dissipation are 260A and 170W respectively. The enhanced thermal dissipation provided by the double-sided cooling will help to reduce device count and save space in high-component-density applications. The thermal resistance rating (Rth (ch-c) of 0.88k/W) to the top side of the package is significantly lower than that of competitor packages.

Because Toshiba’s U-MOS IX-H process enables a ‘best-in-class’ trade-off between R_DS(ON) and output capacitance/output charge, typical Q_OSS is just 77.5nC. This allows designers to further improve system performance and efficiency by raising switching speeds and reducing switching losses.

Target applications for this latest MOSFET include DC-DC converters, secondary-side circuits of AC-DC power supplies and motor drives in cordless home appliances and power tools.