50V GaN RF transistors operate from DC to 4GHz
Availability and full design support capabilities for two new GaN on SiC RF transistors from Qorvo have been announced by Richardson RFPD. The new discrete GaN on SiC HEMTs operate from DC to 4GHz. The QPD1009 is a 15W, 50V device with an output power level of 17W at 2GHz, and a linear gain of 24dB at 2GHz.
The 10W, 50V QPD1010 features an output power of 11W at 2GHz and a linear gain of 24.7dB at 2GHz.
The QPD1009 and QPD1010 are Qorvo's newest additions to its growing GaN family of devices that are tailored for wideband defence and commercial radar, communications and avionics applications.
The new transistors offer significant operational and system cost savings by achieving greater system-level efficiency and are available in low-cost 3 mm x 3 mm plastic QFN packages. Evaluation boards are available.
Featured products
MAX17793
Analog Devices Inc.
3V to 80V, 3A, High-Efficiency, Synchronous Step-Down DC-DC Converter
| SKU: | MAX17793 |
|---|---|
| Stock: | 9316 |
| Cost: | $3.64 |
MAX22516
Analog Devices Inc.
IO-Link Data Link Controller with Transceiver and Integrated DC-DC
| SKU: | MAX22516 |
|---|---|
| Stock: | 8000 |
| Cost: | $5.42 |
