500V MOSFETs' switching speed increases efficiency
Providing low conduction and switching losses, Vishay Intertechnology has announced the first MOSFETs in a 500V family. The low on-resistance and optimised switching speed of the SiHx25N50E devices allows them to increase efficiency and power density in PFC, two-switch forward converter and flyback converter applications.
Built on second-generation Super Junction Technology, the 25A MOSFETs feature low on-resistance of 145mΩ and ultra-low gate charge of 57nC. This provides low gate charge times on-resistance, which is a key figure of merit for MOSFETs used in power conversion applications. The SiHP25N50E, SiHG25N50E and SiHA25N50E devices save energy in high-power, high-performance consumer products, lighting applications and ATX/silver box PC SMPS.
The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing. The RoHS-compliant devices are available in TO-220 (SiHP25N50E), TO-247AC (SiHG25N50E) and thin leaded TO-220 FULLPAK (SiHA25N50E) packages. The TO-220 FULLPAK option offers a low profile which is optimised for slim consumer products.
The SiHx25N50E MOSFETs are available now for sampling and in production quantities, with lead times of 16-17 weeks.
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