40V Trench-MOSFETs deliver 0.7mΩ typical RDS(ON)

28th May 2014

Toshiba

Nat Bowers

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Based on the company’s next generation U-MOS IX-H semiconductor process, Toshiba has introduced its latest family of low-voltage, ultra-efficiency Trench-MOSFETs. According to the manufacturer, these MOSFETs deliver industry leading RDS(ON)*QOSS (on resistance to output charge product) figure of merit for this class of devices.

Initially available in 40V versions, the family will be extended in the coming months with devices offering ratings of 30-60V. The first device in the series has a typical RDS(ON) of only 0.7mΩ (max 0.85mΩ) and a typical output capacitance (COSS) of 1930pF. Rated for 40V, the TPHR8504PL is supplied in an ultra-miniature SOP-Advance package measuring just 5x6mm.

Target applications for the ninth generation U-MOS family include DC/DC converters, synchronous rectification and other power management circuitry where low-power operation, high-speed switching and minimum PCB real estate are needed.

U-MOS IX-H MOSFETs are suitable for high-side and low-side switching in DC/DC converters and secondary side synchronous rectification in AC/DC conversion circuitry. By improving the RDS(ON)*A value, U-MOS IX-H technology supports die size reductions of 65% for the same RDS(ON) - or RDS(ON) reductions of 65% for the same die size compared to the previous 40V UMOS VI-H generation. In addition, a better trade off between output charge (QOSS) and RDS(ON) leads to increased efficiency. As a result U-MOS IX-H MOSFETs can help designers to reduce both power consumption and equipment size.

Designers will be able to choose from a variety of surface mount packages and, in future, also an option that offers dual-side cooling.