Power
Vishay Siliconix Introduces JAN-Qualified 60 V and 90 V N-Channel Power MOSFETs for Military, Space, and Avionics Applications
Vishay Intertechnology has introduced the first of its new Vishay Siliconix military-grade n-channel power MOSFETs: the JAN-qualified 60 V 2N6660JANTX/JANTXV and 90 V 2N6661JANTX/JANTXV. For military, space, and avionics applications, the devices combine low on-resistance and fast switching speeds in the sealed TO-205AD (TO-39) package.
The The devices released today are optimized for TTL/CMOS direct logic level interfaces; drivers for relays, solenoids, lamps, hammers, displays, memories, and transistors; battery-operated systems; and solid-state relays. The MOSFETs' sealed TO-205AD package is designed to withstand the higher temperatures of military and aerospace applications.
The 60 V 2N6660JANTX/JANTXV offers low on-resistance of 1.3 Ω typical at 10 V, a low gate-source threshold voltage of 1.7 V, and fast switching speeds of 8 ns. The 90 V 2N6661JANTX/JANTXV provides low on-resistance of 3.6 Ω typical at 10 V, a low gate-source threshold voltage of 1.6 V, and fast switching speeds of 6 ns. Both devices feature low input and output leakage and provide low input capacitance of 35 pF typical.
The 2N6660ANTXV and 2N6661ANTXV feature a 100 % internal visual (pre-cap) inspection per MIL-PRF-19500. Vishay's additional hi-rel capabilities include Group A, Group B, Group C, and Group E testing, in addition to a lower-cost -2 flow option (MIL-STD-750 visual and processing).