20V MOSFET saves space & power in mobile applications

19th June 2015

Vishay

Nat Bowers

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Datasheet

Designed to save space, decrease power consumption and extend battery life, a TrenchFET 20V n-channel MOSFET unveiled by Vishay is available in the chipscale MICRO FOOT 0.8x0.8x0.357mm package. The Si8824EDB is claimed to provide the industry's lowest on-resistance for any 20V device with a 1mm² or less than 0.7mm² outline. It targets smartphones, tablets, wearable devices, solid-state drives and portable medical devices such as hearing aids.

Optimised for use as a load switch, small-signal switch and high-speed switch in power management applications, the Si8824EDB features extremely low on-resistance of 75mΩ at 4.5V, 82mΩ at 2.5V, 90mΩ at 1.8V, 125mΩ at 1.5V and 175mΩ at 1.2V. According to Vishay, these ratings are up to 25% lower than the closest competing 20V MOSFET in an identical package and up to 65% lower than the closest competing 20V device in the DFN 1x0.6mm package.

The MOSFET's 20V V_DS, ESD protection, ratings down to 1.2V and low on-resistance provide a combination of safety margin, gate drive design flexibility and high performance for lithium-ion battery-powered applications.

The Si8824EDB offers an extremely low on-resistance times area of 40mΩ-mm² (28% lower than the closest competing 20V MOSFET in the DFN 1mm² package) to save space and reduce battery power consumption in mobile applications. The device's low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat and efficiency is higher. The MOSFET's 2,000V integrated ESD protection prevents static damage from handling or human body contact.

Samples and production quantities of the Si8824EDB are available now, with lead times of 14-16 weeks for larger orders.