Vishay Siliconix - 12-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry’s Lowest On-Resistance From 27 mΩ at 4.5 V to 130 mΩ at 1.5 V in Ultra-Small 1.6-mm by 1.6-mm Footprint Area

The new SiB455EDK is the latest product built on TrenchFET Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry’s best on-resistance for a p-channel MOSFET in half.

The SiB455EDK offers an ultra-low on-resistance of 27 mΩ at 4.5 V, 39 mΩ at 2.5 V, 69 mΩ at 1.8 V, and 130 mΩ at 1.5 V. These values are 55 % lower at 4.5 V, 52 % lower at 2.5 V, and 39 % lower at 1.8 V than the previously leading 12-V p-channel device.

The MOSFET will be used as load, PA, and battery switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance of the SiB455EDK translates into lower conduction losses, saving power and prolonging battery life between charges in these devices, while its compact PowerPAK SC-75 package saves space for other product features or to enable smaller end products.

The new device is also the only 12-V MOSFET with both a gate-source voltage of 10 V and an on-resistance rating at 1.5 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs for smaller input voltages.

To reduce field failures due to ESD, the device features typical ESD protection of 1500 V. The MOSFET is halogen-free in accordance with IEC 61249-2-21 and compliant to RoHS Directive 2002/95/EC.

Samples of the new SiB455EDK TrenchFET power MOSFET are available now. Production quantities will be available in Q1 2010, with lead times of 14 to 16 weeks for larger orders.