-20 V p-channel MOSFET is ideal for mobile computing

4th December 2013

Vishay

Nat Bowers

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Datasheet

Extending its broad range of TrenchFET p-channel Gen III power MOSFETs, Vishay Intertechnology have introduced the industry's first -20 V device in a 2.4 mm by 2.0 mm by 0.4 mm CSP MICRO FOOT package size. Featuring extremely low on-resistance of 8.0 mΩ and 11.0 mΩ at -4.5 V and -2.5 V gate drives, respectively, the Si8851EDB is optimised for load and battery switches in power management applications for tablets, smartphones, and notebooks.

Increasing efficiency and saving space in mobile comptuing devices, the Vishay Siliconix Si8851EDB features a low on-resistance. This allows designers to achieve lower voltage drops in their circuits, promoting the efficient use of power and longer battery run times. While its compact footprint saves valuable PCB space, the Si8851EDB features high typical ESD protection to 6 kV. This helps protect handheld devices against static charges while ensuring safe part handling during the manufacturing process.

The Si8851EDB MOSFET combines the Vishay p-channel Gen III technology with the MICRO FOOT's packageless CSP technology and 30-pin design and layout. This givesthe lowest on-resistance possible for a given outline area. The new -20 V p-channel MOSFET offers significant advantages over competiting devices: when compared with the closest competing 2 mm x 2 mm x 0.8 mm device, it combines a 50 % thinner profile with almost half the on-resistance at a 4.5 V gate drive, providing 37 % lower on-resistance per package size; offering similar on-resistance to 3.3 mm x 3.3 mm x 0.8 mm MOSFETs, the Si8851EDB provides a 56 % smaller outline and at least a 30 % lower on-resistance per package size.

The ROHS-compliant MOSFETs are halogen-free according to the JEDEC JS709A definition. Featuring lead times of 12 to 16 weeks for larger orders, the Si8851EDB is available now for sampling and in production quantities. Please contact Vishay for pricing.