Power
20 and 30V P-Channel TrenchFET Power MOSFETs from Vishay
Vishay Intertechnology has released new 20-V and 30-V p-channel TrenchFET power MOSFETs with a ±20-V gate source voltage that offer the industry’s lowest on-resistance for their device types in the SO-8 footprint.
WhilPackaged in the PowerPAK SO-8, both MOSFETs allow for a 60% higher maximum drain current and 75 % higher maximum power dissipation than devices in the SO-8 package.
The devices will be used as the adaptor switch and for load switching applications in notebook computers and industrial/general systems. Adaptor switches (switching between the adaptor/wall power and the battery power) are always on and drawing current. The lower on-resistance of the Si7135DP and Si7633DP translates into lower power consumption, saving power and prolonging battery life between charges.
Vishay has also released the Si4459ADY 30-V p-channel TrenchFET power MOSFET in the SO-8 package. The device offers an on-resistance of 5 mΩ at 10 V and 7.75 mΩ at 4.5 V. All devices released today are 100% Rg- and UIS-tested and halogen-free.
Samples and production quantities of the new Si7135DP and Si7633DP TrenchFET power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.