150V power MOSFET offers industry's lowest RDS(ON)

8th May 2014

Vishay

Nat Bowers

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Datasheet

According to Vishay Intertechnology, the SiA446DJ is the industry's first 150V n-channel MOSFET in the compact, thermally enhanced PowerPAK SC-70 package. The manufacturer has also claimed that it offers the industry's lowest on-resistance (RDS(ON)) at 10V in the 2x2mm footprint area.

The SiA446DJ is optimised for primary-side switching in isolated DC/DC converters, boost converters in LED backlighting, and synchronous rectification and load switching for power management applications in Power over Ethernet (PoE) PD switches, telecomms DC/DC bricks and portable electronic devices. For these applications, the PowerPAK SC-70 is 55% smaller than the 3x2.8mm TSOP-6 package while offering 40% lower thermal resistance. It is designed to increase efficiency by reducing conduction and switching losses in a wide range of space-constrained applications.

Built on ThunderFET technology, the SiA446DJ offers low maximum on-resistance of 177mΩ at 10V, 185mΩ at 7.5V, and 250mΩ at 6V. At 10V, the device's on-resistance is 53% lower than the previous-generation device in the TSOP-6 package, while its typical on-resistance times gate charge figure of merit at 10V is 54% lower for improved efficiency. Furthermore, the SiA446DJ offers 26% lower on-resistance than the latest competing device in the 3x2.7mm SOT-23 package.

Extending Vishay's portfolio of medium-voltage MOSFETs in compact, thermally enhanced packages, the SiA446DJ joins the previously released 100V SiA416DJ in the PowerPAK SC-70 and the 100V SiB456DK in the PowerPAK SC-75. The device is RoHS-compliant, halogen-free, and 100% R_G- and UIS-tested.

Samples and production quantities of the SiA446DJ are available now, with lead times of 13 weeks for larger orders.