100V H-bridge combines dual N- & P-channel MOSFETs

21st January 2016

Nat Bowers

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Datasheet

Incorporating dual N-channel and P-channel MOSFETs into a 5.0 x 4.5mm DFN5045 package, a 100V full H-bridge has been introduced by Diodes Incorporated. The DMHC10H170SFJ's configuration reduces component count and board space, which is especially important in applications that require multiple devices.

Typical applications include the array of ultrasonic transducers used for industrial inspection systems or found in marine sonar equipment, driving DC motors in 48V telecomms fans and other inductive loads such as the coils in wireless charging pads.

The DMHC10H170SFJ has a 100V drain-source breakdown voltage providing sufficient headroom to support 48V telecomms rails and industrial applications, while having a 5V gate voltage to simplify designs with a direct logic level interface to MCUs. An 11A peak pulse current rating also means the device can handle the in-rush current from energising a coil, which is usually greater than five times the typical operating current of a DC motor.

The MOSFET H-bridge is able to replace four SOT23 or two SO-8 packages, which enables compact arrays of multiple ultrasonic transducers. An example of this is 1024 transducers, each needing to be individually driven with an H-bridge, providing steerable and focused beams for phased-array systems. Such systems are used in manufacturing for material flaw inspection or in marine echo‑location systems.

Supplied in a V-DFN5045-12 package, providing a small solution in this market, says the company. The DMHC10H170SFJ is priced at $0.50 each in 3,000 unit quantities.