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Vishay Releases High-Speed 870-nm Infrared Emitter

21st November 2008
ES Admin
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Vishay Intertechnology has broadened its optoelectronics portfolio with the introduction of an 870-nm SMD infrared emitter with the industry’s lowest forward voltage and highest radiant intensity of any such device in the PLCC2 package.
The new VSMF4720 combines a wide viewing angle of ±60° with a high radiant intensity of 16mW/sr at 100mA, 150% greater than any other available emitter in the PLCC2. The combination of a wide viewing angle, high power, and high speed makes the VSMF4720 ideal for data transmission applications such as infrared toll collect and wireless audio transmission. Suitable for high-pulse-current operation, the device offers high power output up to 1A and 50-mW optical power at 100mA.

Given the VSMF4720’s low and stable forward voltage of 1.45V at 100mA and 2.1V at 1A, the device provides the basis for very uniform operation performance, especially in a series circuit layout. Featuring GaAlAs double hetero (DH) technology, the emitter offers switching times of 15ns, meeting the requirements for high-modulation operation of 24MHz and supporting data transmission rates of up to 16Mbit/sec.

The introduction of the VSMF4720 emitter in the 3.5-mm by 2.8-mm by 1.75-mm SMD PLCC2 package complements the recently introduced TSFF5510 5-mm leaded devices, allowing customers to choose the package that is best for their assembly method. The VSMF4720 is compatible with lead (PB)-free reflow soldering and complies with WEEE 2002/96/EC and RoHS 2002/95/EC.

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