Three-phase gate driver IC from IR

The IRS233x(D) is a high-voltage, high speed power MOSFET and IGBT three-phase bridge- driver with referenced output channels to provide 200 mA/420 mA drive current at up to 20 V MOS gate drive capability operating up to 600 V. The new devices feature an integrated ground-referenced operational amplifier to provide analog feedback of the bridge current via an external current sense resistor and optional integrated bootstrap diode to reduce external part count and reduce PCB size.

This comprehensive family provides protection including proprietary negative voltage spike (Vs) immunity for safe operation under extreme switching conditions and short circuit events. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use at high frequencies. The floating channel can be used to drive N-channel power MOSFET or IGBT in the high-side configuration.

The new ICs utilize IR’s advanced high-voltage IC process which incorporates next-generation high-voltage level-shifting and termination technology to deliver superior electrical over-stress protection and higher field reliability. In addition to over-current detection input, the IRS233x(D) features under-voltage lock-out protection, integrated deadtime protection, shoot-through protection, fault-reporting, and is compatible with 3.3 V input logic.

The IRS233x(D) range is available in 44-pin PLCC and 28-pin SOIC (wide body) and the devices are RoHS compliant.