Switch mode MOSFETs and drivers

They are based on the HiPerRFTM MOSFET technology which utilises a patented double metal approach. The high voltage breakdown ratings, combined with low capacitances, result in significantly improved impedances and reduced driver design complexity.

Solid State also offers a range of ultra-fast high current drivers from IXYS to drive these RF MOSFETs and IGBTs for high efficiency performance in RF generators, laser diode drivers, pulse generators, motor drive and power conversion applications. They are designed to switch the largest MOSFETs and IGBTs with minimum switching times.

The IXDD series drivers are manufactured in industry standard outlines which include TO-263 and TO-220 packages. The innovative DEIC420 is manufactured in IXYS RF's patented low-inductance RF package, offering superior thermal performance.

Featuring a wide operating voltage range from 4.5V to 25V, the devices are latch-up protected to rated reverse current and have a very low thermal impedance for DEIC420, TO-263 & TO-220 packages with an output current up to 20A peak.