New Vishay Siliconix 35-A DrMOS Solution Features Input Voltage Range to 27 V; Enables Operating Frequencies in Excess of 1 MHz and High Efficiency to 92 %

The SiC762CD operates from an input voltage range of 3 V to 27 V and delivers up to 35 A of continuous output current. Its integrated power MOSFETs are optimized for output voltages in the range of 0.8 V to 2.0 V, with a nominal input voltage of 24 V. The SiC762CD can also deliver very high power at a 5-V output for ASIC applications.

The SiC762CD’s advanced gate driver IC accepts a single PWM input from the VR controller and converts it into the high- and low-side MOSFET gate drive signals. The PWM input is compatible with all controllers and especially designed to support controllers with tri-state PWM output function.

The device’s driver IC incorporates circuitry to automatically detect light load conditions and can automatically enable skip mode operation (SMOD) in systems that are designed to benefit from high light load efficiency. An adaptive dead time control helps to further improve efficiency. Protection features include UVLO, shoot-through protection, and a thermal warning feature that alerts the system in case of an excessive junction temperature.

Integration of the driver IC and power MOSFETs in the SiC762CD reduces power losses and lessens the effect of parasitic impedances associated with high-frequency discrete power stage implementations. Designers can opt for high-frequency switching to improve transient response, save on costs for output filter components, and achieve the highest power density possible in multi-phase Vcore applications.

The device is halogen-free according to the IEC 61249-2-21 definition, and compliant to RoHS directive 2002/95/EC.

Samples of the SiC762CD are available now. Production quantities will be available in Q1 2010, with lead times of 12 to 16 weeks for larger orders.