Radiation hardened logic level MOSFETs from IR

Compared to bipolar transistors, the new RAD-Hard MOSFETs can be driven directly from CMOS/TTL logic circuitry, eliminating the need for intermediate components, thereby reducing part count, simplifying drive circuitry and enhancing reliability. Moreover, low on- state resistance (RDS(on)), fast switching and small size, make the new MOSFETs ideal alternatives to traditional bipolar devices.

The extended family of MOSFETs includes N and P channel in single and multi-chip configurations offered in a range of through-hole and surface mount packages including SMD-0.5, SMD-2, LCC-28, 14 lead flat pack, TO-205AF, Low-Ohmic TO-257AA, and MO-036AB. The devices have total ionizing dose (TID) capability of up to 300 Krad(Si), single event effect (SEE) immunity to 82 MeV, and are available in screened and commercial off- the-shelf (COTS) versions.