NXP launches new generation of highly efficient low VCEsat transistors

Setting a new benchmark for reduced on-state-resistance and keeping switching times to an absolute minimum, these transistors live up to their name as Breakthrough In Small-Signal (BISS) transistors. Transistors from the ultra-low VCEsat branch enable ultra-low saturation voltage below 50 mV at 1 A. The four new high-speed switching transistors come with reduced switching and storage times down to 125 ns. The new BISS-4 products demonstrate that bipolar transistor technology is an ideal option for switching applications that require higher performance and reduced switching losses.

“By introducing the 4th generation of BISS transistors with its superior low-ohmic substrate technology, NXP is setting the pace in the industry for low VCEsat transistors in small SMD packages and opening new applications for bipolar transistor technology,” said Frank Thiele, product marketing manager for small-signal transistors, NXP Semiconductors.

The new BISS-4 transistors provide high circuit efficiency, low power losses and generate less heat than standard transistors in the same package. With a DC collector current of 4.3 A (peak ICM 8 A) in a small SOT23 package, these new products double the performance of former low VCEsat transistors in SOT23. The new BISS-4 types are designed for loadswitch, switch mode power supply (SMPS) and power management functions in high-volume consumer, communication, computing and automotive applications.

All eight new transistors are AEC-Q101 qualified and come in packages that are free of halogens and antimony oxides and comply with non-flammability classification UL 94V-0 and RoHS standards. Further types in SMD packages SOT89, SOT223 and SO-8 will expand the new low VCEsat (BISS) transistor portfolio end of Q1 2010. NXP launched the first BISS transistors family ten years ago and is a leading supplier for these products.