NEC introduces PowerMOSFET technology for fast switching of high currents

Compared with the UMOS-4 trench technology, the SuperJunction1 technology reduces the gate charge and the input capacity by over 30% while maintaining the extremely low on-resistance RDS(on). The process involves adding P-doped regions below the active P-well of the trench cell which reduces the resistance of the N-epitaxial layer through higher doping. This means that for the same on-resistance the design rule can be increased and the gate charge thus reduced.

Currently, four components in a popular D2PAK package with drain-source voltages of 40 V and 55 V are being readied for mass production. The devices NP110N04PUJ and NP110N055PUJ feature a gate charge of just 150 nC for an RDS(on) of 1.8 mΩ and 2.4 mΩ, respectively. Like all members of the NP Series, the new devices are qualified to AEC-Q101, support a channel temperature up to 175 °C and are fully RoHS-compliant thanks to tin-plated leads.

PowerMOSFETs with SuperJunction1 technology are ideal for applications where large currents have to be switched with high efficiency. These include EPS (electric power steering) or ABS in automotive engineering or in low-voltage industrial drive technology, eg, drives in forklift trucks or other battery-operated equipment.