MOSFETs for synchronous buck converter designs from International Rectifier

The family of new devices combines IR’s latest generation 30 V HEXFET power MOSFET silicon and advanced DirectFET packaging technology to achieve a 40 percent smaller footprint compared to a standard SO-8 device, and features a slim 0.7mm profile. The new generation 30 V devices achieve very low on-state resistance (RDS(on)) while minimizing gate charge (Qg) and gate-to-drain charge (Qgd) together with ultra-low package inductance to reduce both conduction and switching losses.



By leveraging the benchmark power MOSFET silicon and DirectFET packaging, the new 30 V devices are characterized with very low RDS(on), Qg and Qgd to deliver increased efficiency and thermal performance over the entire load. This also allows operation up to 25A per phase, while maintaining the small form factor of a single control and a single synchronous MOSFET.



The IRF6724M, IRF6725M, IRF6726M, and IRF6727M are characterized with very low RDS(on) making them well suited for high current synchronous MOSFETs. These new devices have a common MT and MX footprint as previous generation devices to allow easy migration into applications where increased current levels or improved thermal performance is required.



The very low Qg and Qgd offered by the IRF6721S, IRF6722S and IRF6722M make these devices ideally suited for control MOSFETs and are available in SQ, ST, and MP footprints for greater design flexibility.