Pending
Miniature MOSFETs from Toshiba Electronics Europe
Toshiba Electronics has launched a comprehensive lineup of miniature small signal MOSFETs that have lowest driving voltage of 1.2V with low on resistance. Enabling further reduction in switching voltages for battery operated equipment, the devices within the new SSMx35 MOSFET series operate with a gate drive voltage (VGS) of just 1.2V and are ideally suited to high-speed and analogue switching in portable, battery-powered equipment. The series offers a wide range of single or dual n-channel and p-channel options as well as a dual version that integrates n-channel and p-channel devices in the same package.
Designed to minimise board space, the MOSFETs are supplied in small, thin packages ranging in size from a leadless version of just 1.0mm x 0.6mm x 0.38mm to versions in SOT-363 package size (2.0mm x 2.1mm x 0.9mm). The n-channel devices are rated for maximum DC current of 180mA, while the p-channel MOSFETs are rated to -100mA. Maximum Ron ratings (with a 1.2V drive voltage) are 20Ω and 44 Ω respectively.The single (1-in-1) n-channel (SSM3K35xx) and p-channel (SSM3J35xx) MOSFETs are available in CST3 (1.0mm x 0.6mm x 0.38mm), VESM (1.2mm x 1.2mm x 0.5mm) and SSM (1.6mm x 1.6mm x 0.7mm) packaging. Dual transistor versions (2-in-1) can be supplied as dual n-channel (SSM6Nxx), dual p-channel (SSM6Pxx) and n- plus p-channel combination devices (SSM6L35xx) in SOT-563 and SOT-363 package variants.
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