Mid-voltage transistors increase circuit power density

20th July 2006

ES Admin

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Zetex Semiconductors has introduced a range of mid-voltage bipolar transistors in the SOT23 package, capable of handling a power dissipation of up to 1.25W. With the 3mm x 2.5mm footprint, these seven NPN and six PNP devices help to significantly increase circuit power density by replacing the much larger DPAK, SOT89 and SOT223 packaged parts.

Spanning the collector emitter voltage range from 40 to 100V, the ZXTN and ZXTP bipolars create high efficiency switches for lamp, relay and solenoid driving in automotive, industrial and telecom applications.

Capable of blocking voltages up to 180V and handling a continuous collector current up to 5A, the transistor range will switch loads as high as 500W. In addition, pulsed current ratings up to 12A mean that higher capacitance MOSFETs and IGBTs in power supply circuits can be driven at higher speeds.
Lower heat dissipation and cooler running is achieved thanks to the transistors’ very low saturation voltage – 40mV for the 50V rated ZXTN2031F, while their low equivalent on-resistance - down to 30m? for the 100V rated ZXTN2020F – is much lower than that of alternative MOSFETs in the same sized package.

Also characterised by very high gain – a minimum of 300 for the 40V rated ZXTP25040DFH, these latest high efficiency bipolar transistors from Zetex enable ICs to drive larger loads directly, without the need for additional buffering.

The price of the ZXTN25XXXXFH and ZXTP25XXXXFH transistors is $0.162USD in 10K volumes. The 10K price of the ZXTN20XXF and ZXTP20XXF is $0.227USD.