Billion-Cell Per Square Inch Power MOSFET Offers Industry-Low On-Resistance in PowerPAK® SC-75

With the release of this new device, TrenchFET Gen III p-channel power MOSFETs are now available in four surface-mount package types, including the thermally enhanced PowerPAK SO-8, which offers industry’s lowest on-resistance down to 1.9 mΩ in an SO-8 footprint area. The smallest device in the family so far, the SiB457EDK in the PowerPAK SC-75 features the industry’s lowest on-resistance in a 1.6-mm by 1.6-mm footprint area. Its rDS(on) values range from 35 mΩ at 4.5 V to 130 mΩ at 1.5 V. These new SiB457EDK values are up to 42 % lower at 4.5 V and 2.5 V, and 46 % lower at 1.8 V than the closest competing p-channel device with the same voltage ratings.

TrenchFET Gen III p-channel MOSFETs help to save energy in applications such as adaptor and load switches in notebook computers and industrial/general systems as well as load switches in charging circuits and portable devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance provided by the milestone billion cells per square inch technology translates into lower conduction losses, saving power and prolonging battery life between charges. The following table summarizes the key specifications for the TrenchFET Gen III p-channel devices released to date.

Vishay Siliconix was the industry’s first supplier to introduce Trench power MOSFETs. The company’s TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.

The SiB457EDK specifies on-resistance ratings at four gate-to-source voltages, including a 1.5-V rating that enables designs with smaller input voltages to implemented with a higher safety margin. Its compact PowerPAK SC-75 package, meanwhile, reduces the space required for power circuitry, opening up real estate for other product features or enabling a smaller end product. The SiB457EDK also includes ESD protection of 2500 V typical to enable field failures reductions, while exhibiting low leakage current of only 5 µA at VGS = 8 V.