Large Can DirectFET MOSFET Package Delivers Lowest On–State Resistance for Active ORing and Hot Swap Applications

Featuring IR’s latest generation silicon technology, the IRF6718 is the company’s first device hosted in a large can DirectFET package. Delivering an extremely low RDS(on) of only 0.5mOhm (typical) at 10V Vgs in a 60 percent smaller footprint and 85 percent lower profile than a D2PAK, the new device significantly reduces conduction losses associated with the pass element to dramatically improve the efficiency of the entire system.
Its significantly lower RDS(on) compared to competing devices achieves superior efficiency and thermal performance for high density DC-DC applications such as servers in a smaller footprint than a D2PAK. Moreover, board space and overall system cost can be reduced when compared to existing solutions as fewer parts are required for a given power loss.
In addition, the IRF6718 provides an improved safe operating area (SOA) capability for E-fuse and hot swap circuits. The device is offered lead free and is RoHS compliant.
The IRF6718 is an expansion of IR’s 25V DirectFET family targeting DC switch applications. The IRF6717 medium can and IRF6713 small can DirectFETs also target DC switch applications and provide industry best RDS(on) within their respective PCB footprints.