High-frequency power amplifier MOSFET devices from Renesas Technology

These two products amplify the high-frequency output, to a stipulated level, and transmits it to the antenna. Samples of both devices will be available from the start of Q4 2008.

By adopting a new fabrication process, Renesas has achieved the industry's highest efficiency class with 60% added power efficiency in the RQA0010 at 3.6 V and 55% in the RQA0014. In particular, when a two-stage amplifier is implemented by driving the RQA0010 with the output of the RQA0014, the circuit achieves the industry's highest level of performance: a 1.2 W output at 3.6 V.

For these two products, Renesas analyzed the mechanism by which ESD causes damage and optimized the device structure in the places where damage occurs. As a result, these devices maintain their high-efficiency characteristics at 20 kV and over and achieve ESD immunity level 4. This supports high reliability in wireless equipment.