Fairchild Semiconductor's Ultra FRFET MOSFETS Win ACE Power Product of the Year Award in China

The Ultra FRFET family of MOSFETS from Fairchild triumphed in the Power category of this prestigious industry award.

As this award is voted for by the readers of EE Times, we are proud that engineers in China acknowledged the time and effort that we have expended to develop this technology. The Ultra FRFET device family assists customers as they strive to remain at the cutting-edge of innovation and leadership, developing products that drive the global economy and influencing our daily lives, said Dr. Kim, TaeHoon, senior vice president of Fairchild Semiconductor.

The award was presented at the ACE Awards Event ceremony, held on 24 February in Shenzhen.

The award-winning Ultra FRFET device family targets LCD TV power applications. Through technological advances, Fairchild's half-bridge solution – the Ultra FRFET family – optimizes designs by providing best-in-class reverse recovery time (trr) of 35ns~65ns and the industry's smallest reverse recovery current (1.8 ~ 3.1A). Present LCD TV designs use MOSFETs with two fast recovery diodes (FRDs) and two blocking diodes in a half-bridge circuit to initiate the non-zero voltage switching. The FRDs are used to reduce the reverse recovery current. The blocking diodes prevent the built-in diode of the MOSFET from turning on and eliminate the large reverse recovery current of the diodes.

The Ultra FRFET MOSFET family is a breakthrough solution that offers China's design engineers significant advantages when compared to traditional methodologies in use today and it optimizes component count, simplifies design and offers better reliability, all leading up to significant savings,” added Dr. Kim. Winning this ACE Power Product of the Year award is further validation of our commitment to provide customers with 'The Right Technology for Your Success™'.