Cree to Demonstrate New GaN HEMT Power Amplifier & Switch Products

“We are pleased to preview our new packaged products, targeted for release later this year. We have been actively expanding our GaN MMIC and high power discrete product lines over the last twelve months to include higher power, higher efficiency amplifiers, as well as the recent introduction of high dynamic range GaN switch and our low noise amplifier (LNA) MMIC products, which we believe can further extend the advantages of GaN for commercial and military systems,” explained Jim Milligan, Cree, director of RF & Microwave Products.



“These product demonstrations are designed to show the benefits of Cree GaN to hardware design engineers seeking ways to improve system level output power, bandwidth and dynamic range beyond what can be achieved with traditional GaAs or silicon LDMOS solutions. They will also have access to our product development engineers to answer questions regarding specific implementation and advantages of these next generation products,” Milligan added.