Pending
CISSOID introduces a High Temperature driver for power transistors
CISSOID has unveiled PROMETHEUS, said to be the industry's first driver for power transistors suitable for operation from -55°C up to +225°C. The reference design drives Silicon Carbide transistors and can be adapted to other devices such as MOSFET, IGBT, JFET, BJT and GaN. PROMETHEUS, Cissoid’s next product within its TITAN family of high temperature drivers, was selected by HISPANO-SUIZA for the development of a multi-KW power inverter demonstrator, representative of Aerospace applications, including electric actuators, brakes, pumps and VSV (Variable Stator Valve) motors.
“CISSOID’s track record in providing best-in-class high temperature integrated circuit solutions made them our natural partner for the development of our high performance power inverters” said Régis Meuret, Safran Power research manager at HISPANO-SUIZA (Safran Group).PROMETHEUS implements a 2A power driver on the basis of proven high temperature CISSOID active components. The driver can be supplied from 11V to 30V and will switch up to 500KHz on a 30nF load. Non-overlap circuitry avoids short-circuit currents through the push-pull power output stage. PROMETHEUS drives high voltage high power devices (e.g. SiC transistors) and targets both electric motors and switched mode power supplies (SMPS). Automotive, Aerospace, Oil&Gas and Industrial applications will get the savings in weight and energy coming from this driver operating reliably at temperatures higher than any other. PROMETHEUS is the first of a line of products. The next generations will further increase performance, volume reduction, add new functions and extend the range of applications.
Jean-Christophe Doucet, VP of Business Development at CISSOID, said: “PROMETHEUS is a cornerstone of CISSOID’ product strategy, as the same technology is going to be used in key markets, such as automotive applications where hybrid and full electric vehicles require similar power inverters. Car makers today must add cooling systems so that standard semiconductors can be used. This is clear limitation, as cooling systems have a dramatic impact on cost, weight and energy consumption. Upcoming SiC and GaN power devices combined with CISSOID Prometheus will uniquely support reliable operation at 225°C and above, decreasing significantly cooling requirements.”