Altatech Introduces Advanced Materials CVD and ALD Tool

AltaCVD combines vaporizer technology, chamber design and gas/liquid panel integration. The combination of a proprietary reactor design and precursor introduction path with a pulsed liquid injection and vaporization enables nanoscale control of thickness, uniformity, composition and stoichiometry in complex materials. These depositions are unavailable today with existing techniques.

AltaCVD is suited for the plasma-enhanced MOCVD and ALD processes of a wide range of materials used in logic and memory devices as well as in microsystems and 3D integration, such as : high-K gate dielectrics, metal electrodes, high-K coupling dielectrics and electrodes in MIM and DRAM capacitors, ferroelectric materials, chalcogenide alloys for PCRAM, seedless and self-forming copper diffusion barriers, copper seed layers, transparent conductive oxides, thin film batteries electrodes and electrolyte.

« The unique design and technology of AltaCVD is in line with Altatech’s product strategy aiming at accelerating the introduction of next materials generation in the semiconductor chain. » says Hervé Monchoix Altatech Technology Director. « With AltaCVD, we offer the best-in-class, flexible nanodeposition tool to advanced R&D facilities’ teams. »

To date, multiple beta versions of AltaCVD systems have already been installed for advanced high-K gate dielectric integration at front-end-of-line R&D facilities and for through-silicon-via (TSV) metallization at a back-end-of-line R&D facility.