Vishay’s 1-mm by 1-mm Chipscale MOSFETs

The 20-V p-channel Si8461DB and Si8465DB will be used for load switch, battery switch, and charger switch applications in a wide range of portable devices, where their small size and height will help reduce the space occupied by power management circuitry and/or enable more functionality. Compared to the next smallest chipscale power MOSFET on the market, the 1-mm by 1-mm by 0.548-mm MICRO FOOT has a 9 % smaller footprint.

On-resistance for the Si8461DB is 0.1 Ω at a 4.5-V gate drive, which represents a tenfold improvement over non-chipscale devices with similar footprint dimensions and thus provides a significant opportunity to conserve battery energy in portable devices. In addition to the 4.5-V rating, the Si8461DB is specified for maximum on-resistance values at 2.5 V, 1.8 V, and 1.5 V, which aligns the device with the smaller input signals common in portable systems. For applications requiring higher input voltages such as charger switches, the Si8465DB has a gate-to-source voltage of 12 V; on-resistance is 0.104 Ω at a 4.5-V gate drive and 0.148 Ω at 2.5 V.

Samples and production quantities of the Si8461DB and Si8465DB are available now, with lead times of 10 to 12 weeks for larger orders.