Next generation GaN-on-Silicon mid-power LEDs

2nd December 2013

Nat Bowers

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Plessey Semiconductor has launched its next-generation GaN-on-Silicon mid-power LEDs, doubling the efficacy of the first generation MAGIC (Manufactured on GaN-on-Si I/C) products released earlier in 2013. Developed using standard silicon semiconductor production techniques to achieve high flux output at substantially lower cost, the PLW114050 is the first in a family of entry-level LED lighting products.

"Customers are delighted that a European company is committed to developing and manufacturing world class GaN-on-Si LEDs. The market currently has many suppliers of LEDs but the quality and reliability can be variable. Plessey is a trusted brand with a 50-year plus track record of manufacturing products to the highest standards. Our aim is to light the world with MAGIC LEDs," comments Dr. Jose Lopez, Chief Commercial Officer at Plessey Semiconductor.

Available with a Lambertian distribution in an industry standard 3020 package, the PLW114050 entry-level LED offers a drive current of 60mA and a typical forward voltage of 3.2V. The PLW114050 is available in a CCT range from 6500K to 2700K.

Dr. Keith Strickland, Chief Technology Officer at Plessey Semiconductor, commented: "We have made great strides forward in refining, productising and improving our patented MAGIC technology. We have a roadmap that puts MAGIC ahead of the efficacies achieved by sapphire-based LEDs and, thereby, sets a new milestone in terms of Lm/$ performance. By approaching efficacy parity, we are accelerating the widespread adoption of GaN-on-Si LED-based lighting products. Our MAGIC LED products have a cost advantage over comparable sapphire-based LEDs as we use 6-inch, high yield, standard, automated silicon manufacturing technology."

Plessey also supply the blue LED PLB010050 in sawn-wafer die form. Additional package options will be made available at a later date.