Optoelectronics

Wide Spectral Response InGaAs PIN Photodiode

19th May 2009
ES Admin
0
Hamamatsu Photonics has introduced the G10899 series of InGaAs PIN photodiodes, featuring a very wide spectral response range of 0.5 to 1.7 µm. Standard InGaAs PIN photodiodes only offer a useful response range from 0.9 to 1.7 µm, with silicon photodiodes being used to cover from 400 nm to 1.1 µm. The new G10899 can provide the end user with the ability to implement only one detector, where in the past they might need two.
This feature lends itself well to the optical communications field, since the G10899 has excellent sensitivity at three of the commonly used wavelengths for optical communications, 850 nm, 1310 nm and 1550 nm, whereas a standard InGaAs detector would have very low response at 850nm.

The G10899 series is available in three standard active area sizes, 1, 2 and 3 mm, with the 1 mm device operating at bandwidths up to 45 MHz and with a very low dark current, typically 1 nA.

Within the optical communications sector, the G10899 series are most useful for use in optical power meters, OTDRs, tuneable laser diode monitors, free space communications and well as other network monitoring applications. The properties of this new range of devices also make them suitable for spectral analysis, industrial inspection and temperature sensing applications, making it an excellent all-rounder.

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