InGaAs PIN detector photodiodes available

A PIN diode has a broad undoped intrinsic region inserted between P and N type doped semiconductor regions. The InGaAs material captures incident infrared photons in the intrinsic region generating electron hole pairs which are gathered at external electrodes, generating an electrical output. Photovoltaic detectors are an excellent choice in many applications due to their high sensitivity, fast response, low noise and wide dynamic range.

A typical standard product is the IG17 with a peak wavelength of 1.55 microns and cut of at 1.65 microns, making it well suited for applications such as gas analysis, laser monitoring and tuneable diode laser spectroscopy. 

The detector chips are housed in standard TO style packages, typically TO-46 and TO-39. The detectors have active area diameters ranging from 0.23 through to 3.00mm.