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| Infineon’s EZ-PD™ PMG1 MCUs represent an integrated solution for embedded systems that provide or consume power from the USB-C port and need an MCU to implement product features. Eager to learn how to use Infineon’s EZ-PD™ PMG1 high-voltage Microcontrollers with USB-C PD as a co-processor for your embedded applications such as motor control, vacuum cleaners, service and (portable) industrial robots, cobots, test and measurement systems, power tools and cameras.
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| Seika Machinery, a provider of advanced machinery, materials and engineering services, is excited to announce an upcoming SMTA Technical Webinar titled "Effectiveness of Strain Gage Methodology for Durable Board Design." |
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| Xenics has expanded its linear short-wave infrared (SWIR) camera portfolio with the launch of Lynx R and XSL R series. |
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| Synopsys has announced that it has entered into an accelerated share repurchase agreement (ASR) with Wells Fargo Bank, NA to repurchase an aggregate of $300 million of Synopsys stock. |
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| What makes a good angle, inclination, vibration, and displacement sensor? Is it solid measurement acquisition or processing? A fast safety interface or a robust overall design with a few special features? |
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| In a monumental achievement for space exploration, India's robotic lander, Vikram, recently became the first spacecraft to successfully touch down near the enigmatic south pole of the moon. |
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| Nvidia has seen its sales soar by more than double as demand for its AI chips heats up. The record-high sales saw the chip giant’s revenue jump to above $13.5 billion for the three months to the end of June. |
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| AI and quantum sit atop as two of the most innovative and exciting emerging technologies of the present day – a time writhe with new discoveries. |
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| UK microchip designer Arm has filed to list its shares on the US Nasdaq stock market. The move, earmarked for September, has generated interest and ire from titans such as Amazon and even the UK Prime Minister (PM). |
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| For high−voltage switching power applications, silicon carbide or SiC MOSFETs bring notable advantages compared to traditional silicon MOSFETs and IGBTs. Switching high−voltage power rails in excess of 1,000 V, operating at hundreds of kHz is non−trivial and beyond the capabilities of even the best superjunction silicon MOSFETs.
This paper highlights the unique device characteristics associated with SiC MOSFETs. Critical design requirements related to optimal gate−drive design for maximizing SiC switching performance will be described. System level considerations such as start−up, fault protection and steady state switching will also be discussed.
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