Wolfspeed to present at ECSCRM 2016

Exhibiting at Booths 6 and 7, scientists and engineers from Wolfspeed will display, demonstrate, and discuss their best-in-class SiC materials and technologies, which enable faster, smaller, lighter, more powerful, and more efficient electronic systems for high voltage switching, high frequency, high power, and high temperature applications.  

Cengiz Balkas, chief operating officer, Wolfspeed said: “As the industry’s leading SiC materials and device manufacturer, we’re proud to be a part of an innovative conference like ECSCRM. We look forward to the opportunity to work with other industry experts to further advance the field.”

Wolfspeed also will participate in six technical conference events at ECSCRM 2016. 

At the conclusion of SiC MOSFET Tutorial Day on Sunday, 25^th September, Director of Power R&D Scott Allen will deliver summary remarks. On Monday, Chief Technology Officer John Palmour and Chief Operating Officer Cengiz Balkas will participate in industrial session panel discussions designed to facilitate the exchange of ideas concerning recent scientific and technical developments between participating companies and attendees.

Wolfspeed will also participate in two oral sessions and two poster sessions. Senior Research Scientist Sei-Hyung Ryu will deliver a presentation entitled ‘Impact of Carrier Lifetime Enhancement Using High Temperature Oxidation on 15kV 4H-SiC P-GTO Thyristor,’ and Research Scientist Daniel Lichtenwalner will deliver ‘Interface Structure and Properties of SiC MOSFETs with Alkaline Earth Interface Passivation.’ 

During the poster sessions, Research Scientist Jon Zhang will present ‘Next Generation 1700V, 20mΩ 4H-SiC DMOSFETs with Low Specific On-resistance and High Switching Speed,’ and Research Scientist Robert Leonard will present ‘Exploration of Bulk and Epitaxy Defects in 4H SiC Using Large Scale Optical Characterisation.’