Seminars focus on wide bandgap semiconductor advances
A programme of European ‘Wide Bandgap Technology’ seminars which will help design engineers to take advantage of the latest SiC and GaN components has been announced by Future Electronics. SiC (silicon carbide) and GaN (gallium nitride) wide bandgap semiconductor materials are attracting great interest from power engineers because of their superior thermal, switching and power-handling characteristics compared to silicon.
Recent steep falls in the price of MOSFETs, diodes and modules based on wide bandgap materials are making them increasingly attractive for mainstream applications in the industrial, automotive, military and aerospace markets.
Future Electronics’ new series of day-long seminars will help design engineers to compare the latest wide bandgap components to conventional silicon devices, and to make well-informed decisions about their system-wide impact.
Engineers from Future Electronics’ specialist Future Power Solutions division will lead the technical presentations alongside power design experts from the following component manufacturers: STMicroelectronics, ON Semiconductor, ROHM Semiconductor, Microsemi, Panasonic, AVX, TE Connectivity, RECOM, Murata and Aavid Thermalloy.
Each event will also include a lunchtime technology fair featuring demonstrations from these franchised suppliers of Future Electronics.
The seminars will cover the following topics relating to the use of wide bandgap semiconductors: • The effect of choosing SiC or GaN components on system performance, size and cost • Comparing discrete SiC components with hybrid Si-SiC and full SiC modules • Implications for passive component selection and thermal management • How to migrate successfully from superjunction MOSFETs to SiC or GaN MOSFETs • Special considerations in the implementation of gate drivers and auxiliary power supply design Access to the events is limited to professional engineers who want information to support decisions about power systems for applications such as motor drives, inverters, high-voltage power converters and power supplies, and who reserve a place in advance.
Dates and venues for the Future Electronics Wide Bandgap Technology seminars are: 19 September 2017 Gothenburg, Sweden 3 October 2017 Rennes, France 10 October 2017 Madrid, Spain 11 October 2017 San Sebastian, Spain 22 November 2017 Helsinki, Finland 29 November 2017 Jutland, Denmark 31 January 2018 Padova, Italy 8 February 2018 Lyon, France