ROHM unveils new SiC products and vision for the future at PCIM 2024

“ROHM are expecting significant growth in the SiC market, especially moving into 2025, 2027, and beyond,” commented Ino. “Europe and China are the most important markets here.” In light of this, the company has announced its brand new EcoSiC brand, combining performance with sustainability.

The EcoSiC brand

EcoSiC is a trademark for ROHM products using the advanced material silicon carbide. SiC is seen as a key material for the next generation of power semiconductors. It offers significant advantages in efficiency and reliability, particularly in high-performance applications such as electric vehicles, industrial equipment and renewable energy systems.

The launch of the EcoSiC brand pursues several strategic objectives for ROHM:

• Improved performance: SiC devices enable higher switching frequencies and lower losses, leading to more efficient and compact systems.
• Sustainability: Promoting eco-friendly products – such as carbon neutral SiC technologies – significantly reduce energy consumption in applications such as electric vehicles and renewable energy systems.
• Technological innovation: The hope is that EcoSiC will position ROHM as a leading company in the development and manufacture of SiC products. ROHM will continually invests in research and development to improve the performance of SiC components. On top, ROHM are going to expand its production capacities to meet the increasing demand of SiC components.

The new TRCDRIVE pack

Alongside the launch of its new EcoSiC, ROHM revealed four models in the TRCDRIVE pack series, featuring 2-in-1 SiC moulded modules. These include two 750V-rated models (BSTxxxD08P4A1x4) and two 1,200V-rated models (BSTxxxD12P4A1x1), optimised for electric vehicle traction inverters. The TRCDRIVE pack supports up to 300kW, offering high power density and a unique terminal configuration to address challenges in traction inverter miniaturisation, efficiency, and assembly time.

“Smaller package, higher power density, ease-of use, and high productivity are the key philosophies of these new releases,” added Ino.

The TRCDRIVE pack reduces size by maximising the heat dissipation area with a unique structure. It incorporates ROHM’s 4th Generation SiC MOSFETs with low ON resistance, resulting in a power density 1.5 times higher than standard SiC moulded modules, greatly aiding inverter miniaturisation for electric vehicles.

The modules feature control signal terminals with press-fit pins, allowing easy connection by pushing the gate driver board from the top, significantly reducing installation time. Additionally, low inductance (5.7nH) is achieved through a two-layer bus-bar structure for the main wiring, minimising switching losses.

What’s next for ROHM?

Ino was also enthusiastic to comment on the future for SiC development at ROHM. “Next year we [ROHM] will release our fifth generation SiC MOSFET.

“Our current SiC MOSFET roadmap will see a 30% reduction in development time with each generation, until at least 2029.” This is going to cut SiC MOSFET development time from the current 4 year period down to a two year period.

Additionally, ROHM also announced the soon-to-launch 8-inch SiC substrate, Ino saying: “This year ROHM will start producing 8-inch SiC substrates, transitioning fully the following year.

“These developments are enabled thanks to our partnership with Toshiba.” From this partnership, ROHM will have access to Toshiba’s 300mm fab for production, and Toshiba will have access to ROHM’s 8-inch SiC substrates.