Microsemi unveils 15 devices at IMS 2016

Siobhan Dolan Clancy, Vice President and General Manager, Discrete Products Group, Microsemi, commented: “We are proud to launch these 15 highly differentiated new solutions, which cater to the shifting needs of our customer base, as well as the industry’s growth forecasts in the defence, communications, instrumentation, industrial and aerospace markets. Microsemi offers RF, microwave and MMW antenna-to-bits solutions with a progressive emphasis on high performance semiconductor and packaging technologies. This has allowed us to work continuously with industry leaders in our target markets to solve complex engineering problems at the discrete, RFIC and MMIC levels.”

During the IMS2016 exhibition, Microsemi’s new devices, as well as other innovative products from the company, will be on display in booth #2119 for engineers, system architects and researchers interested in technologies that would differentiate their new designs. Products to be showcased include:

GaN HEMT RF power transistors and drivers cover L-band to 750W - Microsemi’s expanding family of RF power transistors based on GaN HEMT on SiC technology includes six new L-band RF power transistors and drivers rated between 120 and 750W. The 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V and 1416GN-120E/EL/EP RF power transistors and drivers deliver outstanding size, weight, power and efficiency performance in a wide range of radar, avionics and communications applications with compact packaging options.

Monolithic SPST and SPDT PIN switch elements deliver up to 100W through 6GHz - Microsemi’s MPS2R10-606, MPS4103-607 and MPS2R11-608 are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss of less than 0.3dB, 55dB of isolation and 500ns switching times over the entire 100MHz to 6GHz frequency range. These products are suitable replacements for the conventional shunt mounted chip and series mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches. Capable of switching up to 100W of continuous wave power, these devices suit transmit/receive and high power switching in military and commercial radio, radar and cellular infrastructure applications. These products meet RoHS requirements per EU directive 2002/95/EC.

Low cost MELF PIN diodes feature 2GHz switching, 500V breakdown voltage - Microsemi has introduced UMX502-UMX812, a new series of low cost, MELF high power, ceramic PIN diodes. This series of PIN diodes are hermetically sealed, high reliability surface mount packaged devices with full face bonded chips and very low inductance construction. The MELF PIN diodes are suited for a wide range of general purpose and broadband switching, attenuating and phase-shifting applications from high frequency through 2GHz, as well as for use in MRI coil switching and other low magnetic applications. These RoHS-compliant products meet the requirements of EU directive 2002/95/EC and are fully compatible with pick and place and solder reflow manufacturing techniques. UMX502-UMX812 are ESD HBM Class 2 products and exhibit breakdown voltage ratings up to 500V.

Ultimate performance MMICs - As a leader in MMIC products, Microsemi's portfolio spans the DC to 65GHz frequency range and targets a broad range of applications including those in electronic warfare, radars, test and measurement instrumentation and microwave communications. The portfolio is based on high performance process technologies and comprises high power and low noise broadband amplifiers, amplifier modules, prescalers, attenuators and switches. Microsemi offers 20 distributed amplifier products. Microsemi's prescalers combine higher frequency operation, the flexibility to divide by a large number of ratios and excellent residual phase noise.

Lowest sleep state current sub-GHz transceiver - Operating in the 779-965MHz unlicensed ISM frequency bands, Microsemi’s ZL70550 consumes only 2.8mA while transmitting at -10dBm output power and a similar 2.5mA during reception. It offers an extremely low sleep state current of 10nA, making it suitable for low-duty cycle applications. Microsemi addresses the high cost of battery replacement issues common with medical and industrial customers by leveraging the intellectual property from its ultra-low power implantable pacemakers and hearing aids to provide the lowest power wireless link in an extremely small form factor that is easy to deploy.

WiFi high-linearity power amplifiers and FEMs - Microsemi has an expanding portfolio of world-class customer premise equipment products for WiFi 802.11 a/b/g/n/ac applications. Designed for medium power applications, Microsemi’s 5 and 2GHz single band FEMs are optimised for long packet EVM performance ideally suited for wireless client set-top box, gateway and 4K UHD platforms. Where cost and size are critical, a dual-band (5/2GHz) FEM will be offered in compact 4x3mm 28-pin QFN package, using 3.3V supply, suited for smart TV and OTT content platforms.

Microsemi offers a family of high-linearity power amplifiers, featuring the latest in 2GHz amplifiers, delivering +23dBm of linear power with market leading current consumption, critical for thermal management for today’s newer 4x4 and 8x8 multiuser MIMO platforms.

The Microsemi products displayed at IMS2016 are available now.