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GaN showcase 650V, 100A GaN power transistors in Montreal

16th September 2015
Nat Bowers
0

GaN Systems has announced that it will demonstrate its GS66540C 650V 100A high current GaN power transistor at ECCE’15, the IEEE Energy Conversion Congress & Expo in Montreal, from 20th to 24th September. GaN Systems is delighted to be showcasing its family of Island Technology GaN transistors, the broadest and most complete on the market, at this premier global event being hosted in its home country.

GaN Systems’ GS66540C high current power transistor is based on proprietary Island Technology and belongs to its 650V family of high density devices that achieve extremely efficient power conversion with fast switching speeds of more than 100V/ns and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets.

The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are now sampling with major customers, including OEMs and Tier 1 manufacturers, and are being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage.

Also on display will be multiple customer platforms, including an exciting 2kW commercial vehicle inverter from the leading global transportation technology company, Ricardo, and a 3kW, 800/380V DC/DC bidirectional converter to enable energy efficient power systems in the home, developed by NextHome, a US consortium of consumer electronics manufacturers.

Julian Styles, Director of Sales & Marketing Americas, will be a panelist during the Congress, leading the town hall meeting on Advances in SiC and GaN Based Devices, Packaging and Systems which takes place on Tuesday 22nd September.

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