Conference explores industrial manufacture of GaN epiwafers

Dr. Germain’s presentation is part of the “Wide Bandgap RF Devices” Theme, which will run on Tuesday, March 18th in the afternoon at the Sheraton Frankfurt Airport Hotel & Conference Center.

Germain’s presentation will cover topics such as how High Voltage structures, deposited on 6” Si substrates are fully compatible with Si-device production, how wafers designed for RF applications have enabled device operation up to the K band and how EpiGaN’s unique differentiator, the capping of the epiwafers with in-situ grown SiN, is proposed as the optimal surface passivation layer because it further enables more robust and more reliable devices. She will also discuss the status of the GaN wafer technology at EpiGaN and EpiGaN’s development roadmap.

“Based on more than 14 years of experience in the field of MOCVD-growth of III-Nitrides structures, EpiGaN has established in its dedicated clean-rooms, a unique manufacturing platform supplying GaN epitaxial wafers to the semiconductor industry,” says Germain. “A large panel of (In,Al,Ga) N-based HEMTs structures designed either for RF applications (on SiC or Si substrates) or for High Voltage devices (on Si substrates), are available in various wafer diameters (3”; 4”; 150mm; 200mm in development).”

As a Gold Sponsor of the event, EpiGaN also has a booth at the conference and welcomes visitors to visit.